Kaynes Semicon lines up GaN fab, micro‑LED JV

Kaynes Semicon has begun commercial production at its Sanand, Gujarat OSAT facility, which has just started ramping shipments of intelligent power modules for EV, automotive and industrial customers under India’s semiconductor program. The ₹3,300‑crore plant, India’s second operational chip unit, is designed to scale from an initial few million units a month toward roughly 1.5 billion units annually as all three units on the 47‑acre campus come online. Building on this, Kaynes is now eyeing a GaN power semiconductor fab and a micro‑LED joint venture structured to tap the forthcoming ISM 2.0 incentive scheme, with the GaN fab still at an exploratory stage and the micro‑LED JV said to be close to announcement with a likely Southeast Asian, non‑Chinese technology partner.

The government’s ISM 2.0, expected to carry an outlay of about ₹1.2 lakh crore and now moving toward cabinet approval, is the key policy umbrella under which Kaynes wants to position these next‑phase investments. Collectively, the OSAT ramp plus prospective GaN and micro‑LED projects position Kaynes as a more vertically integrated player in India’s emerging semiconductor ecosystem, with analysts expecting its OSAT and PCB expansion to drive a meaningful uplift in group revenues over the next several years.

CT Bureau