Infineon scales up volume production and accelerates roll out of CoolSiC Mosfet

Infineon Technologies enters high volume production of a comprehensive portfolio of 1200 V CoolSiC Mosfet devices. They are rated from 30 mΩ to 350 mΩ and implemented into TO247-3 and TO247-4 housings. The expansion includes a surface-mount device (SMD) portfolio and a 650 V CoolSiC MOSFET product family, both to be launched soon.

With these products, Infineon addresses the fast-growing demand for energy-efficient SiC solutions in power-conversion schemes such as battery charging infrastructure, energy storage solutions, photovoltaic inverters, uninterruptable power supplies (UPS), motor drives as well as server and telecom switched-mode-power supplies (SMPS).

As for all previously launched CoolSiC Mosfet lead products in TO247 and easy power module package, the new discrete devices build on a leading trench SiC MOSFET semiconductor process. This process was developed to allow for both lowest losses in the application and highest reliability in operation. Furthermore, according to related application profiles, gate-source operating voltages are adopted for discrete package solutions. A benchmark low dynamic loss enables highest efficiency with a simple unipolar gate-drive scheme.

Infineon completes its discrete offering with a range of selected driver IC products fulfilling the needs posed by the ultrafast SiC Mosfet switching feature. Together, CoolSiC Mosfet and EiceDRIVER gate driver ICs leverage the advantage of the technology: improved efficiency, space and weight savings, part count reduction, and enhanced system reliability. Together, this opens up the possibility to lower system cost, reduces operational expenses and total cost of ownership, enabling new solutions in an energy-smart world.